SK Hynix accelerates 1c DRAM ramp, aims for 34% share by Q4 2026

SK Hynix is pushing hard on its sixth-generation 10nm-class DRAM technology, plotting a trajectory that takes 1c DRAM from roughly 13% of its production mix in Q2 2026 to 34% by Q4 2026. 1c DRAM is set to become the foundational technology for SK Hynix’s HBM4E, the next evolution of high-bandwidth memory. Mass production of HBM4E is planned for 2027. The production timeline, quarter by quarter SK Hynix’s 1c DRAM share sat at roughly 10% in Q1 2026. By Q2, with substantial shipments underway, that figure climbed to approximately 13%. The company projects 24% by Q3 2026, then the jump to 34% by Q4. By Q1 2027, the share is expected to hit 35%, which would surpass the older 1b node’s estimated 33% share, completing the generational handoff. That projected Q4 2026 figure of 34% would also put SK Hynix ahead of Samsung’s estimated 31% DRAM output share for the same quarter. SK Hynix has also signaled that it expects improved bit growth in the second half of 2026, driven largely by rising HBM4 volumes. Why 1c matters for HBM4E SK Hynix shipped 12-layer HBM4E samples in June 2026 with 48 GB capacity and data rates of 16 Gbps per pin. Those samples demonstrated more than 20% better power e...