SK Hynix breaks ground on $4B HBM memory facility in Indiana for AI

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The Korean chipmaker adds storage to its American plans as a memory shortage tied to AI demand shows no sign of easing SK Hynix plans to build a NAND memory facility in the US, aimed squarely at the AI data centers consuming chips faster than anyone can make them. The move would give the South Korean memory giant a second major manufacturing footprint on American soil. Its first is already under construction in Indiana, and the timing is no accident: its CEO thinks the current shortage could run to the end of the decade. From packaging to storage HBM feeds data to AI processors at high speed, while NAND stores the massive datasets those processors chew through. That NAND effort runs through Solidigm, SK Hynix’s US subsidiary. Solidigm had been studying whether to build a dedicated NAND flash fabrication plant in the US, with upstate New York emerging as a leading candidate as of September 2026. As of late October 2026, no final investment decision on that plant had been made. The site, cost, and timeline for the NAND facility have not been confirmed. The project is also tangled up in a separate question: US approvals for equipment shipments to Solidigm’s existing facility in Dalian...

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